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Radiation hardening is the act of making electronic components and systems resistant to damage or malfunctions caused by ionizing radiation (particle radiation and high-energy electromagnetic radiation),〔("Radiation Hardening" ) McGraws AccessScience〕 such as those encountered in outer space and high-altitude flight, around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare. Most semiconductor electronic components are susceptible to radiation damage; radiation-hardened components are based on their non-hardened equivalents, with some design and manufacturing variations that reduce the susceptibility to radiation damage. Due to the extensive development and testing required to produce a radiation-tolerant design of a microelectronic chip, radiation-hardened chips tend to lag behind the most recent developments. Radiation-hardened products are typically tested to one or more resultant effects tests, including total ionizing dose (TID), enhanced low dose rate effects (ELDRS), neutron and proton displacement damage, and single event effects (SEE, SET, SEL and SEB). == Problems caused by radiation == Environments with high levels of ionizing radiation create special design challenges. A single charged particle can knock thousands of electrons loose, causing electronic noise and signal spikes. In the case of digital circuits, this can cause results which are inaccurate or unintelligible. This is a particularly serious problem in the design of satellites, spacecraft, military aircraft, nuclear power stations, and nuclear weapons. In order to ensure the proper operation of such systems, manufacturers of integrated circuits and sensors intended for the military or aerospace markets employ various methods of radiation hardening. The resulting systems are said to be rad(iation)-hardened, rad-hard, or (within context) hardened. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Radiation hardening」の詳細全文を読む スポンサード リンク
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